Anisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Anisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth

Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs-Thomson type formula and the associated step stiffness as a function of the step edge orientation angle, θ. Basic ingredients of the model are: (i) the diffusion of point defects (“adatoms”) on terraces and along step edges; (ii) the convection of kinks along step edges; and (iii) constitutive l...

متن کامل

Kinetic model for a step edge in epitaxial growth.

A kinetic theory is formulated for the velocity of a step edge in epitaxial growth. The formulation involves kinetic, mean-field equations for the density of kinks and "edge adatoms" along the step edge. Equilibrium and kinetic steady states, corresponding to zero and nonzero deposition flux, respectively, are derived for a periodic sequence of step edges. The theoretical results are compared t...

متن کامل

A Simple Model for Anisotropic Step Growth

We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and Monte Carlo simulations, we study the morphology of growing steps in detail. In particular, under typical Molecular Beam Epitaxy conditions the step morphology ...

متن کامل

A model for anisotropic epitaxial lateral overgrowth

The model for anisotropic crystal growth on a substrate covered by a mask material with a periodic series of parallel long trenches where the substrate is exposed to the vapor phase is developed. The model assumes that surface diffusion and deposition flux are the main mechanisms of the growth, and that the three key surface quantities (energy, mobility and adatom diffusivity) are anisotropic w...

متن کامل

One-step Ge/Si epitaxial growth.

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Multiscale Modeling & Simulation

سال: 2008

ISSN: 1540-3459,1540-3467

DOI: 10.1137/070690948